2021 Nano-Structure Devices

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Academic unit or major
Graduate major in Electrical and Electronic Engineering
Watanabe Masahiro  Ishibashi Kouji 
Course component(s)
Lecture    (ZOOM)
Day/Period(Room No.)
Mon3-4()  Thr3-4()  
Course number
Academic year
Offered quarter
Syllabus updated
Lecture notes updated
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Course description and aims

Nano-Structure device focuses on the topics of solid state physics in nanostructures for further understandings of advanced semiconductor devices based on the fundamental of solid state physics. Topics include formation of heterojunction, band profiles of heterostructure, Density of states of nanostructures, Electron transport and scattering mechanisms in nanostructures, Electron-photon interaction, spin transport, coulomb blockade, quantum computing.

Student learning outcomes

By the end of this course, students will be able to:
1. Illustrate Band profile of heterojunction.
2. Evaluate density of states and carrier concentration of semiconductor nanostructures.
3. Calculate current density of nanostructure devices under an appropriate transport modelling.
4. Explain typical electron scattering models in semiconductors.
5. Explain electron-photon interactions in solids
6. Explain spin physics in solids
7. Explain basic principle of quantum computing.


heterojunction, band discontinuity, density of states, ballistic transport, tunneling transport, optical absorption, optical gain, single electron transport, Coulomb blockade, spin transport, quantum computer.

Competencies that will be developed

Specialist skills Intercultural skills Communication skills Critical thinking skills Practical and/or problem-solving skills

Class flow

Lecture is provided by Power-point presentation. Quizzes or exercise problems will be assigned in the class.

Course schedule/Required learning

  Course schedule Required learning
Class 1 Introduction, formation of heterostructure, electron transport across heterojunction, 2DEG. Illustrate Band profile of heterojunction, 2 dimensional electron gas (2DEG).
Class 2 Electronic states in quantum structures, density of states of quantum-well and quantum-wire structures. Explain and calculate density of states of bulk and quantum confined structures
Class 3 Electron transport in quantum structures. Explain and calculate electron current of ballistic transport and tunneling transport in quantum structures
Class 4 Scattering processes in semiconductor devices. Explain scattering mechanism in semiconductor heterostructures and nanostructures.
Class 5 Electron-photon interaction in semiconductor nanostructures Explain calculation method of electron-photon interaction in semiconductors.
Class 6 optical absorption and amplification Explain relation between Optical absorption/amplification and spontaneous emission/stimulated emission coefficient.
Class 7 Device application of heterojunctions/Confirmation of understandings Explain device applications of semiconductor heterostructures.
Class 8 Overview of nanoscale devices Explain the basic quantum principles that govern the nanoscale devices
Class 9 Coulomb blockade, single electron transport Review of the electron transport and explain the basic idea of the coherent transport.
Class 10 Current formula for the coherent conductor - Landauer formula Explain basic idea of Landauer formula applicable to the coherent conductor.
Class 11 Coulomb blockade in the small single tunnel junctions Explain basic idea of the Coulomb blockade in the small tunnel junctions.
Class 12 Single electron box and single electron transistors Explain how the Coulomb bloclade is used for the single electron box and single electron transisitor
Class 13 Coulomb blockade in the small Josephson junctions - Effect of Quantum coherence - Explain Coulomb blocakde in the small Josephson juctions, number-phase relationship and the importance of quantum coherence.
Class 14 Quantum bits and idea of quantum computing Explain the principle and future prospects of quantum computing.

Out-of-Class Study Time (Preparation and Review)

To enhance effective learning, students are encouraged to spend approximately 100 minutes preparing for class and another 100 minutes reviewing class content afterwards (including assignments) for each class.
They should do so by referring to textbooks and other course material.


Not designated.

Reference books, course materials, etc.

Presentation slides for the lecture will be provided as PDF files downloadable from OCW-i.

Assessment criteria and methods

Quizzes in the lecture: 20%, Intermediate test: 40%, Final exam or report: 40%

Related courses

  • EEE.D211 : Semiconductor Physics
  • EEE.D411 : Semiconductor Physics
  • EEE.D351 : Electron Devices I
  • EEE.D352 : Electron Devices II
  • EEE.D511 : Magnetic Property and Spin Dependent Phenomenon
  • EEE.D331 : Optical and Electromagnetic Property in Semiconductors

Prerequisites (i.e., required knowledge, skills, courses, etc.)

Semiconductor Physics (EEE.D211) and Semiconductor Physics (EEE.D411) are recommended (not mandatory).

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