Semiconductor devices are the backbone of many advanced wireless communication systems and have raised a considerable amount of attention in terms of research and development activities. This course introduces the basics of semiconductor devices as well as advanced applications to students taking this course.
By the end of the course, students are able to understand the basic operation of semiconductor devices and to recognize the usage and extending application field of semiconductor devices.
semiconductor device, power device, RF device, compound semiconductor, bio chip
|Intercultural skills||Communication skills||Specialist skills||Critical thinking skills||Practical and/or problem-solving skills|
Lectures are given by experts in the field from overseas to give the students an overall knowledge about the device and applications of semiconductors. The lectures are held at National Chiao Tung University.
|Course schedule||Required learning|
|Class 1||Course Regulation||Introduction to semiconductor devices with applications|
|Class 2||III-V Devices for Emerging High Frequency Applications (I)||HEMT structure, InAs/InP based devices|
|Class 3||III-V Devices for Emerging High Frequency Applications (II)||Parasitic reduction techniques, parameter extraction and modeling|
|Class 4||Biomedical Applications for Semiconductor Devices (I)||Circular Tumor Cells, isolation methods|
|Class 5||Biomedical Applications for Semiconductor Devices (II)||Liquid Biopsy, micro-fluid|
|Class 6||3D-IC Design and Implementation||Non-ideal effects on Analog circuits, 3D-IC implementation|
|Class 7||Emerging Memories (I)||Introduction to RAMs, history of memories|
|Class 8||Emerging Memories (II)||SRAM, DRAM and non-volatile memory|
|Class 9||GaN Devices for Power Electronic Applications (I)||Introduction for microwave and power electronic applications|
|Class 10||GaN Devices for Power Electronic Applications (II)||Technological implementation for GaN devices|
|Class 11||GaN Devices for Power Electronic Applications (III)||Electrical properties and reliability for GaN devices|
|Class 12||GaN Devices for Power Electronic Applications (IV)||GaN Microwave and THz devices|
|Class 13||GaN Devices for Power Electronic Applications (V)||Power switching devices|
|Class 14||GaN Devices for Power Electronic Applications (VI)||Explorative wide bandgap devices, future topics|
|Class 15||VLSI Technology (I)||Industry overview and Benchmark on Logic LSIs|
|Class 16||VLSI Technology (II)||Advanced Technologies for System LSIs|
|Class 17||MOS Interfaces and Schottky Interfaces (I)||Device scaling, interface state density, high-k gate dielectrics|
|Class 18||MOS Interfaces and Schottky Interfaces (II)||Metal/semiconductor interface, silicidation, ideality factor|
|Class 19||Power Devices: pn diodes, thyristor, MOSFET, IGBT, WBG (I)||Power diodes, power transistors|
|Class 20||Power Devices: pn diodes, thyristor, MOSFET, IGBT, WBG (II)||SiC, diamond devices|
|Class 21||Semiconductor Fabrication Process||Lithography, scaling|
|Class 22||BJTs and Compound Semiconductor Devices||Bipolar transistors, microwave FET|
Ed. S. Deleonibus, “Integrated Nanodevice and Nanosystem Fabrication - Materials, Techniques, and New Opportunities”, Pan Stanford Publishing, ISBN: 9789814774222
Overall grade in the class will be judged by class attendance and attitude (50%) and term-end report submission (50%).
Electric circuit, Electromagnetism, semiconductor device