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- 工学院，物質理工学院，環境・社会理工学院共通科目
- Liberal arts and basic science courses
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- School of Science
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School of Environment and Society
- Department of Architecture and Building Engineering
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- Graduate major in Technology and Innovation Management
- Common courses
- Liberal arts and basic science courses
- Academic unit or major
- Graduate major in Electrical and Electronic Engineering
- Instructor(s)
- Wakabayashi Hitoshi Kakushima Kuniyuki Miyamoto Yasuyuki Hatano Mutsuko
- Class Format
- Lecture
- Media-enhanced courses
- Day/Period(Room No.)
- -
- Group
- -
- Course number
- EEE.D452
- Credits
- 3
- Academic year
- 2019
- Offered quarter
- 2Q
- Syllabus updated
- 2019/5/20
- Lecture notes updated
- -
- Language used
- English
- Access Index
-
Course description and aims
Semiconductor devices are the backbone of many advanced wireless communication systems and have raised a considerable amount of attention in terms of research and development activities. This course introduces the basics of semiconductor devices as well as advanced applications to students taking this course.
Student learning outcomes
By the end of the course, students are able to understand the basic operation of semiconductor devices and to recognize the usage and extending application field of semiconductor devices.
Keywords
semiconductor device, power device, RF device, compound semiconductor, bio chip
Competencies that will be developed
| ✔ Specialist skills | Intercultural skills | Communication skills | Critical thinking skills | ✔ Practical and/or problem-solving skills |
Class flow
Lectures are given by experts in the field from overseas to give the students an overall knowledge about the device and applications of semiconductors. The lectures are held at National Chiao Tung University.
Course schedule/Required learning
| Course schedule | Required learning | |
|---|---|---|
| Class 1 | Course Regulation | Introduction to semiconductor devices with applications |
| Class 2 | III-V Devices for Emerging High Frequency Applications (I) | HEMT structure, InAs/InP based devices |
| Class 3 | III-V Devices for Emerging High Frequency Applications (II) | Parasitic reduction techniques, parameter extraction and modeling |
| Class 4 | Biomedical Applications for Semiconductor Devices (I) | Circular Tumor Cells, isolation methods |
| Class 5 | Biomedical Applications for Semiconductor Devices (II) | Liquid Biopsy, micro-fluid |
| Class 6 | 3D-IC Design and Implementation | Non-ideal effects on Analog circuits, 3D-IC implementation |
| Class 7 | Emerging Memories (I) | Introduction to RAMs, history of memories |
| Class 8 | Emerging Memories (II) | SRAM, DRAM and non-volatile memory |
| Class 9 | GaN Devices for Power Electronic Applications (I) | Introduction for microwave and power electronic applications |
| Class 10 | GaN Devices for Power Electronic Applications (II) | Technological implementation for GaN devices |
| Class 11 | GaN Devices for Power Electronic Applications (III) | Electrical properties and reliability for GaN devices |
| Class 12 | GaN Devices for Power Electronic Applications (IV) | GaN Microwave and THz devices |
| Class 13 | GaN Devices for Power Electronic Applications (V) | Power switching devices |
| Class 14 | GaN Devices for Power Electronic Applications (VI) | Explorative wide bandgap devices, future topics |
| Class 15 | VLSI Technology (I) | Industry overview and Benchmark on Logic LSIs |
| Class 16 | VLSI Technology (II) | Advanced Technologies for System LSIs |
| Class 17 | MOS Interfaces and Schottky Interfaces (I) | Device scaling, interface state density, high-k gate dielectrics |
| Class 18 | MOS Interfaces and Schottky Interfaces (II) | Metal/semiconductor interface, silicidation, ideality factor |
| Class 19 | Power Devices: pn diodes, thyristor, MOSFET, IGBT, WBG (I) | Power diodes, power transistors |
| Class 20 | Power Devices: pn diodes, thyristor, MOSFET, IGBT, WBG (II) | SiC, diamond devices |
| Class 21 | Semiconductor Fabrication Process | Lithography, scaling |
| Class 22 | BJTs and Compound Semiconductor Devices | Bipolar transistors, microwave FET |
Textbook(s)
none
Reference books, course materials, etc.
Ed. S. Deleonibus, “Integrated Nanodevice and Nanosystem Fabrication - Materials, Techniques, and New Opportunities”, Pan Stanford Publishing, ISBN: 9789814774222
Assessment criteria and methods
Overall grade in the class will be judged by class attendance and attitude (50%) and term-end report submission (50%).
Related courses
- EEE.C201 ： Electric Circuits I
- EEE.E211 ： Electromagnetic Fields and Waves
- EEE.D211 ： Semiconductor Physics
Prerequisites (i.e., required knowledge, skills, courses, etc.)
Electric circuit, Electromagnetism, semiconductor device
