2018 Nano-Structure Devices

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Academic unit or major
Graduate major in Electrical and Electronic Engineering
Instructor(s)
Watanabe Masahiro  Kouji Ishibashi  Ishibashi Kouji 
Course component(s)
Lecture
Mode of instruction
 
Day/Period(Room No.)
Mon3-4(G113)  Thr3-4(G113)  
Group
-
Course number
EEE.D551
Credits
2
Academic year
2018
Offered quarter
4Q
Syllabus updated
2018/4/5
Lecture notes updated
2019/1/28
Language used
English
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Course description and aims

Nano-Structure device focuses on the topics of solid state physics in nanostructures for further understandings of advanced semiconductor devices based on the fundamental of solid state physics. Topics include formation of heterojunction, band profiles of heterostructure, Density of states of nanostructures, Electron transport and scattering mechanisms in nanostructures, Electron-photon interaction, spin transport, coulomb blockade, quantum computing.

Student learning outcomes

By the end of this course, students will be able to:
1. Illustrate Band profile of heterojunction.
2. Evaluate density of states and carrier concentration of semiconductor nanostructures.
3. Calculate current density of nanostructure devices under an appropriate transport modelling.
4. Explain typical electron scattering models in semiconductors.
5. Explain electron-photon interactions in solids
6. Explain spin physics in solids
7. Explain basic principle of quantum computing.

Keywords

heterojunction, band discontinuity, density of states, ballistic transport, tunneling transport, optical absorption, optical gain, single electron transport, Coulomb blockade, spin transport, quantum computer.

Competencies that will be developed

Specialist skills Intercultural skills Communication skills Critical thinking skills Practical and/or problem-solving skills

Class flow

Lecture is provided by Power-point presentation. Quizzes or exercise problems will be assigned in the class.

Course schedule/Required learning

  Course schedule Required learning
Class 1 Introduction, formation of heterostructure, electron transport across heterojunction, 2DEG. Illustrate Band profile of heterojunction, 2 dimensional electron gas (2DEG).
Class 2 Electronic states in quantum structures, density of states of quantum-well and quantum-wire structures. Explain and calculate density of states of bulk and quantum confined structures
Class 3 Electron transport in quantum structures. Explain and calculate electron current of ballistic transport and tunneling transport in quantum structures
Class 4 Scattering processes in semiconductor devices. Explain scattering mechanism in semiconductor heterostructures and nanostructures.
Class 5 Electron-photon interaction in semiconductor nanostructures Explain calculation method of electron-photon interaction in semiconductors.
Class 6 optical absorption and amplification Explain relation between Optical absorption/amplification and spontaneous emission/stimulated emission coefficient.
Class 7 Device application of heterojunctions. Explain device applications of semiconductor heterostructures.
Class 8 Confirmation of understandings Solve problems.
Class 9 Electron transport in quantum-dot Explain the principle of electron transport in quantum-dots.
Class 10 Coulomb blockade, single electron transport Explain the principle of coulomb blockade and single electron transport in nanostructures.
Class 11 Superconducting tunneling junction Explain the principle of Superconducting tunneling junction.
Class 12 Spin in quantum structures Explain electron spin in nanostructures.
Class 13 Spin current, spin transport Illustrate spin current and spin transport in nanostructures.
Class 14 Introduction of Q-bit and fundamentals of quantum calculation Explain Q-bit and principle of quantum calculation.
Class 15 Quantum computing Explain the principle and future prospects of quantum computing.

Textbook(s)

Not designated.

Reference books, course materials, etc.

Presentation slides for the lecture will be provided as PDF files downloadable from OCW-i.

Assessment criteria and methods

Quizzes in the lecture:20%, Intermediate test:40%, Final exam or report: 40%

Related courses

  • EEE.D211 : Semiconductor Physics
  • EEE.D411 : Semiconductor Physics
  • EEE.D351 : Electron Devices I
  • EEE.D352 : Electron Devices II
  • EEE.D511 : Magnetic Property and Spin Dependent Phenomenon
  • EEE.D331 : Optical and Electromagnetic Property in Semiconductors

Prerequisites (i.e., required knowledge, skills, courses, etc.)

Semiconductor Physics(EEE.D211) and Semiconductor Physics (EEE.D411) are recommended (not mandatory).

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