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- Common courses
- Liberal arts and basic science courses
- Academic unit or major
- Undergraduate major in Electrical and Electronic Engineering
- Instructor(s)
- Suzuki Safumi
- Class Format
- Lecture
- Media-enhanced courses
- Day/Period(Room No.)
- -
- Group
- -
- Course number
- EEE.D381
- Credits
- 1
- Academic year
- 2024
- Offered quarter
- 3Q
- Syllabus updated
- 2024/3/14
- Lecture notes updated
- -
- Language used
- Japanese
- Access Index
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Course description and aims
In various situations of electricity generation, power transmission, distribution, and power use, by converting voltage, current, and frequency to match the equipment, an efficient use in electric power becomes possible. The key device for highly efficient conversion is the power device. This course provides the basics of physics, device structures, device characteristics of the power devices, and their applications. Topics include pin-diodes, thyristors, power MOS transistors, Insulated Gate Bipolar Transistor (IGBT), and wide-gap semiconductor power devices.
Student learning outcomes
The goals of this course are as follows.
1) Explain the physics and characteristics of semiconductor power devices
2) Explain the characteristics of wide-gap semiconductor devices
Keywords
Power devices, Power Converters, Wide-gap semiconductors
Competencies that will be developed
| Specialist skills | Intercultural skills | Communication skills | ✔ Critical thinking skills | Practical and/or problem-solving skills |
| ✔ ・Applied specialist skills on EEE | ||||
Class flow
At the beginning of each class, solutions to exercise problems that were assigned during the previous class are reviewed. Towards the end of class, students are given exercise problems related to the lecture given that day to solve. To prepare for class, students should read the course schedule section and check what topics will be covered. Required learning should be completed outside of the classroom for preparation and review purposes.
Course schedule/Required learning
| Course schedule | Required learning | |
|---|---|---|
| Class 1 | Role of the power devices | Understand the role of the power devices and solve the exercises |
| Class 2 | Power devices: physics, device structures, characteristics | Understand and solve the exercises of power devices: physics, device structures, characteristics |
| Class 3 | pin Diodes | Understand and solve the exercises of pin diodes |
| Class 4 | Power MOS transistors | Understand and solve the exercises of power MOS transistors |
| Class 5 | Insulated Gate Bipolar Transistor (IGBT) | Understand and solve the exercises of Insulated Gate Bipolar Transistor (IGBT) |
| Class 6 | Wide-gap semiconductor power devices 1 | Understand and solve the exercises of wide-gap semiconductor power devices |
| Class 7 | Wide-gap semiconductor power devices 2, Exercise problems to assess the students' level of understanding on what has been taught so far. | Understand and solve the exercises of wide-gap semiconductor power devices. Use the exercise problems to better understand the topics covered, and evaluate one’s own understanding. |
Out-of-Class Study Time (Preparation and Review)
To enhance effective learning, students are encouraged to prepare and review for class content (including assignments).
Textbook(s)
None required.
Reference books, course materials, etc.
All materials used in class can be found on T2SCHOLA.
Hiromichi Ohashi and Masaaki Kuzuhara, "Power devices," Maruzen.
Assessment criteria and methods
Students will be assessed on their understanding of the power devices (physics, device structure, characteristics, and applications). Students' course scores are based on exercise problems during each class.
Related courses
- EEE.D351 ： Electron Devices I
- EEE.D352 ： Electron Devices II
- EEE.D391 ： Semiconductor Fabirication Process
- EEE.D211 ： Semiconductor Physics
- EEE.P311 ： Power Electronics
Prerequisites (i.e., required knowledge, skills, courses, etc.)
Enrollment in the related courses (Electron devices) is desirable.
