The performance of VLSI has been improved by scaling in MOS devices and continuous technology processes have been implemented to overcome the scaling limit. The lecture will overview new structures and materials for performance enhancement based on scaling law, and further discuss future MOS devices with novel principle. In addition, memory, as well as image sensors technologies, will be discussed.
Understanding of the scaling law for advanced MOS devices with new structures and new materials.
Corresponding educational goals are:
(1) Specialist skills Fundamental specialist skills
(4) Applied skills (inquisitive thinking and/or problem-finding skills) Organization and analysis
(7) Skills acquiring a wide range of expertise, and expanding it into more advanced and other specialized areas
MOSFET, 3D channel, high mobility channel, memory, image sensors
|Specialist skills||Intercultural skills||Communication skills||✔ Critical thinking skills||Practical and/or problem-solving skills|
|✔ ・Applied specialist skills on EEE|
Overview of advanced MOS devices using handouts. A short exam will be conducted at the end of the class. (except for the 1st class)
|Course schedule||Required learning|
|Class 1||Advanced MOS devices and scaling law||Scaling law|
|Class 2||Issues in advanced MOS devices||Short channel effect, ballistic transport|
|Class 3||Advanced MOS devices: 3D channel||FinFET, Si nanowire FET|
|Class 4||Advanced MOS devices: high mobility channel||high mobility channel|
|Class 5||MOS devices based on novel operating principals||Tunnel FET, negative capacitances|
|Class 6||Memory devices: SRAM, DRAM, Flash and other memories||SRAM, DRAM, Flash memory|
|Class 7||CMOS image sensors||CMOS image sensor|
To enhance effective learning, students are encouraged to spend approximately 100 minutes preparing for class and another 100 minutes reviewing class content afterwards (including assignments) for each class.
They should do so by referring to textbooks and other course material.
Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press, 2nd Ed. 2009
Evaluation is based on short exams on the topic of the lectures. The short exams will require basic knowledge of electrostatics, solid-state physics, and mathematics. Short exams will be conducted from 2nd to 7th class and the total will be the score. No final exam for this lecture.