2020 Electron Devices II

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Academic unit or major
Undergraduate major in Electrical and Electronic Engineering
Instructor(s)
Kakushima Kuniyuki 
Course component(s)
Lecture
Mode of instruction
ZOOM
Day/Period(Room No.)
Mon1-2(S224)  
Group
-
Course number
EEE.D352
Credits
1
Academic year
2020
Offered quarter
2Q
Syllabus updated
2020/9/18
Lecture notes updated
-
Language used
Japanese
Access Index

Course description and aims

The performance of VLSI has been improved by scaling in MOS devices and continuous technology processes have been implemented to overcome the scaling limit. The lecture will overview new structures and materials for performance enhancement based on scaling law, and further discuss future MOS devices with novel principle. In addition, memory, as well as image sensors technologies, will be discussed.

Student learning outcomes

Understanding of the scaling law for advanced MOS devices with new structures and new materials.

Corresponding educational goals are:
(1) Specialist skills Fundamental specialist skills
(4) Applied skills (inquisitive thinking and/or problem-finding skills) Organization and analysis
(7) Skills acquiring a wide range of expertise, and expanding it into more advanced and other specialized areas

Keywords

MOSFET, 3D channel, high mobility channel, memory, image sensors

Competencies that will be developed

Specialist skills Intercultural skills Communication skills Critical thinking skills Practical and/or problem-solving skills
・Applied specialist skills on EEE

Class flow

Overview of advanced MOS devices using handouts. A short exam will be conducted at the end of the class. (except for the 1st class)

Course schedule/Required learning

  Course schedule Required learning
Class 1 Advanced MOS devices and scaling law Scaling law
Class 2 Issues in advanced MOS devices Short channel effect, ballistic transport
Class 3 Advanced MOS devices: 3D channel FinFET, Si nanowire FET
Class 4 Advanced MOS devices: high mobility channel high mobility channel
Class 5 MOS devices based on novel operating principals Tunnel FET, negative capacitances
Class 6 Memory devices: SRAM, DRAM, Flash and other memories SRAM, DRAM, Flash memory
Class 7 CMOS image sensors CMOS image sensor

Out-of-Class Study Time (Preparation and Review)

To enhance effective learning, students are encouraged to spend approximately 100 minutes preparing for class and another 100 minutes reviewing class content afterwards (including assignments) for each class.
They should do so by referring to textbooks and other course material.

Textbook(s)

N/A

Reference books, course materials, etc.

Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press, 2nd Ed. 2009

Assessment criteria and methods

Evaluation is based on short exams on the topic of the lectures. The short exams will require basic knowledge of electrostatics, solid-state physics, and mathematics. Short exams will be conducted from 2nd to 7th class and the total will be the score. No final exam for this lecture.

Related courses

  • ZIB.C403 : Electronic Properties of Semiconductors

Prerequisites (i.e., required knowledge, skills, courses, etc.)

Electromagnetism

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