2017 Fundamentals of Single Crystal and Thin Film Processing

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Academic unit or major
Undergraduate major in Materials Science and Engineering
Instructor(s)
Shinozaki Kazuo  John Baniecki  John David Baniecki 
Course component(s)
Lecture
Day/Period(Room No.)
Mon7-8(S7-202)  Thr7-8(S7-202)  
Group
-
Course number
MAT.C315
Credits
2
Academic year
2017
Offered quarter
3Q
Syllabus updated
2017/3/17
Lecture notes updated
2017/11/13
Language used
Japanese
Access Index

Course description and aims

This course will provide the basic knowledge of the oxide thin film deposition and the oxide single crystal growth. In the thin film deposition, the deposition methods through gas phase and the characterization method of the thin film will be explained. In the latter parts, the basic theory of the single crystal growth and various single crystal growth methods will be explained.

Student learning outcomes

At the end of this course, students will be able to:
1) Have the basic understanding of the thin film deposition process through vapor phase.
2) Have the understandings of the thin film deposition by PVD process and CVD process.
3) Have a brief knowledge of the characterization method for the thin film.

Keywords

thin film, PVD, CVD, epitaxial thin film, film formation mechanism, nucleation,

Competencies that will be developed

Intercultural skills Communication skills Specialist skills Critical thinking skills Practical and/or problem-solving skills

Class flow

In the first half, students will learn the basics of the thin film deposition in English. In the latter half, students will learn the single crystal growth in Japanese. Exercise problems will be given. Attendance is taken in every class.

Course schedule/Required learning

  Course schedule Required learning
Class 1 Course Introduction. vacuum science and technology: kinetic theory of gases and transport. Students have to explain the vacuum technology and kinetic theory of gases and transport.
Class 2 PVD processes (I): vacuum pumps and systems, physics and chemistry of evaporation, evaporation hardware and techniques. Students have to explain the vacuum chamber and vacuum system.
Class 3 PVD processes (II): glow discharges and plasmas, sputtering processes, sputtering hardware and techniques. Students have to explain the PVD method, plasma and sputtering.
Class 4 CVD processes (I): reaction types, thermodynamics of CVD, gas transport, growth kinetics. Students have to explain the CVD method, gas transportation and kinetics of thin film growth.
Class 5 CVD processes (II): CVD processes and systems. Film formation and structure (I): capillarity theory, atomistic nucleation processes (1). Students have to explain the CVD apparatus and nucleation.
Class 6 Film formation and structure (II): atomistic nucleation processes (2), cluster coalescence and depletion, grain structure of films. Epitaxial film growth: structural aspects, lattice misfit and imperfections, growth methods. Students have to explain the epitaxial thin film and perfection of thin film crystal.
Class 7 Structural characterization of films:SEM, TEM, XRD Chemical characterization of films (I): physical principles of electron spectroscopy, photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES). Students have to explain the thin film structure.
Class 8 Chemical characterization of films (II): Rutherford back scattering spectroscopy (RBS), secondary Ion Mass spectroscopy (SIMS) . Students have to explain the chemical evaluation method.
Class 9 Oral presentation. Students have to make oral presentation in English.
Class 10 Introduction to single crystal growth: single crystals and applications, Single crystal growth method 1 Students have to explain the single crystals and their applications.
Class 11 Introduction to single crystal growth: Single crystal growth method 2 Students have to explain the manufacturing methods of the single crystals.
Class 12 Crystal growth theory I: Single crystal, driving force of crystal growth, nucleation Students have to explain the driving force of the crystal growth and the nucleation.
Class 13 Crystal growth theory II: growth rate of single crystal, Students have to explain the growth rate of single crystal. .
Class 14 Crystal growth theory III: mechanism of crystal growth, equilibrium form, growth form Students have to explain the mechanisms of the single crystal growth.
Class 15 Crystal growth and phase diagram: kinds of phase diagram and growth methods Students have to design the single crystal growth method base on the phase diagram.

Textbook(s)

None required.

Reference books, course materials, etc.

All materials used in class can be found on OCW-i.
Referencd books,
Kuroda, Kessho ha Ikiteiru, Science-sha (1989)
The Japanese Association for Crystal Growth ed., Hangook of Crystal Growth, Kyoritsu-Shuppan (1995)
Milton Ohring, The Materials Science of Thin Films, Academic Press (2002)
S. Wolf and R.N. Tauber, Silicon processing for the VLSI Era: Vol.1-Process Technology, Lattice Press (1999)

Assessment criteria and methods

Students’ course scores are based on final exams, exercise problems, reports and the oral presentation (Baniecki).

Related courses

  • MAT.C206 : Ceramic Processing

Prerequisites (i.e., required knowledge, skills, courses, etc.)

No prerequisites are necessary, but enrollment in the related fields (Ceramic Processing) is desirable.

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