Future semiconductor devices are required to realize high-performance without variation by realizing nanometer-order fine pattern fabrication and technologies for controlling defects and interfaces at the atomic level. In this course, leading-edge researchers from industries will give lectures on topics from basics and advanced one about materials analysis technology and plasma processing/surface treatment technology, which are applied to from R&D to manufacturing site in the industry.
Through this course, you will deepen the basic understanding of cutting-edge technology used in manufacturing industries (especially material analysis and plasma processing technology) that will be required in real society. You will also understand need-to-prepare to work as a researcher and engineer in the industry and the atmosphere there.
✔ Applicable | How instructors' work experience benefits the course |
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In this lecture, teaching faculty members with 30 years of practical experiences belonging to the company, now, in the field of material and process technologies for electron devices will provide valuable contents on basics and applications in materials and plasma process, based on their practical experiences. |
Semiconductor, LSI, device, process, miniaturization, plasma, dry etching, microfabrication, crystal defect, structural analysis, surface analysis, optical properties, device reliability technology, physical property simulation, material informatics
✔ Specialist skills | Intercultural skills | Communication skills | Critical thinking skills | ✔ Practical and/or problem-solving skills |
Lecture
Course schedule | Required learning | |
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Class 1 | Analysis-1: Defects in Semiconductors and their characterization techniques | To understand the basic properties of semiconductor materials and devices, and the purpose of characterization |
Class 2 | Analysis-2: Structural Characterization (1) | Explain the principles and basics of scanning and transmission electron microscopy |
Class 3 | Analysis-3: Structural Characterization (2) | Explain the principle and basics of X-ray evaluation and 3D atom probe |
Class 4 | Analysis-4: Electrical and Optical characterizations | Explain the principles and basics of electrical and optical characterizations |
Class 5 | Analysis-5: Surface Analysis | Explain the principles and basics of scanning probe microscopy, secondary ion mass spectrometry, and photoelectron spectroscopy |
Class 6 | Analysis-6: Reliability issues in Semiconductor Devices | Explain device degradation phenomena and reliability evaluation techniques (mainly for semiconductor light emitting devices) |
Class 7 | Analysis-7 Materials Simulation and Materials Informatics | Promote understanding of the latest trends and future trends in material search methods |
Class 8 | Plasma-1: What is plasma? | Understanding the role of plasma processes in semiconductor device manufacturing |
Class 9 | Plasma-2: Control of neutral particles | Describes the motion of neutral particles in a plasma system |
Class 10 | Plasma-3: Control of charged particles | Understand the relationship between the application of electric and magnetic fields and the motion of electrons and ions |
Class 11 | Plasma-4: Collision | Understanding collision reactions such as ionization and excitation of atoms and molecules |
Class 12 | Plasma-5: Sheath and ion energy control | Understanding ion acceleration and its control mechanism for a substrate placed in a plasma |
Class 13 | Plasma-6: Plasma systems | Understand the mechanism of plasma reaction control mechanism |
Class 14 | Plasma-7: Process control | Understand the current status and examples of plasma technology used in advanced device manufacturing |
To enhance effective learning, students are encouraged to spend approximately 100 minutes preparing for class and another 100 minutes reviewing class content afterwards (including assignments) for each class.
They should do so by referring to textbooks and other course material.
To distribute the hand-outs during class (also uploaded to OCW-i)
・D.B. Bwillians: “Transmission Electron Microscopy: A Textbook for Materials Science”, Plenum Press (2009)
・S. Tomiya: “Chap. 7”Structural Defects in GaN-based Materials and their relation to GaN-based Laser diodes” in O. Ueda and S. J. Pearton (ed.) “Materials and Reliability Handbook for Semiconductor Optical and Electron Devices” Springer (2014)
・Michael K. Miller :” Atom Probe Tomography: Analysis at the Atomic Level “, Springer (2000)
・Michael A. Lieberman, “Principles of Plasma Discharges and Materials Processing”, Wiley-Interscience (1994).
To submit the report after the lectures instead not to conduct the examination.
No specific requirements, however Students who are interested in analysis and process technologies in the industry are highly preferable.
Hitoshi Wakabayashi (wakabayashi.h.ab[at]m.titech.ac.jp),
Shigetaka Tomiya (tomiya.s.aa [at]m.titech.ac.jp),
Tetsuya Tatsumi (tatsumi.t.ac [at]m.titech.ac.jp)
This class is held as part of a joint research course by “DE” of Sony Corporation. We are looking forward to actively attending those who have basic queries on material analysis technology and plasma processing, as well as those who are interested in research and development at companies, and those who are willing to obtain information that will be helpful for future careers. “DE (Distinguished Engineers)" is a title given to technology professionals, with only 40 people appointed throughout all Sony group companies.