2019 Advanced Topics on Material Analysis and Basics of Plasma Processing for Nano Devices

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Academic unit or major
Graduate major in Electrical and Electronic Engineering
Tomiya Shigetaka  Tatsumi Tetsuya  Wakabayashi Hitoshi 
Course component(s)
Day/Period(Room No.)
Tue3-4(S224)  Fri3-4(S224)  
Course number
Academic year
Offered quarter
Syllabus updated
Lecture notes updated
Language used
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Course description and aims

Future semiconductor devices are required to realize high-performance without variation by realizing nanometer-order fine pattern fabrication and technologies for controlling defects and interfaces at the atomic level. In this course, leading-edge researchers from industries will give lectures on topics from basics and advanced one about materials analysis technology and plasma processing/surface treatment technology, which are applied to from R&D to manufacturing site in the industry.

Student learning outcomes

Through this course, you will deepen the basic understanding of cutting-edge technology used in manufacturing industries (especially material analysis and plasma processing technology) that will be required in real society. You will also understand need-to-prepare to work as a researcher and engineer in the industry and the atmosphere there.


Semiconductor, LSI, device, process, miniaturization, plasma, dry etching, microfabrication, crystal defect, structural analysis, surface analysis, optical properties, device reliability technology, physical property simulation, material informatics

Competencies that will be developed

Intercultural skills Communication skills Specialist skills Critical thinking skills Practical and/or problem-solving skills
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Class flow


Course schedule/Required learning

  Course schedule Required learning
Class 1 Introduction To understand the relationship between the evolution of semiconductor devices, process technology and analysis technology
Class 2 Analysis-1: Defects in Semiconductors and their characterization techniques To understand the basic properties of semiconductor materials and devices, and the purpose of characterization
Class 3 Analysis-2: Structural Characterization (1) Explain the principles and basics of scanning and transmission electron microscopy
Class 4 Analysis-3: Structural Characterization (2) Explain the principle and basics of X-ray evaluation and 3D atom probe
Class 5 Analysis-4: Electrical and Optical characterizations Explain the principles and basics of electrical and optical characterizations
Class 6 Analysis-5: Surface Analysis Explain the principles and basics of scanning probe microscopy, secondary ion mass spectrometry, and photoelectron spectroscopy
Class 7 Analysis-6: Reliability issues in Semiconductor Devices Explain device degradation phenomena and reliability evaluation techniques (mainly for semiconductor light emitting devices)
Class 8 Analysis-7 Materials Simulation and Materials Informatics Promote understanding of the latest trends and future trends in material search methods
Class 9 Plasma-1: What is plasma? Understanding the role of plasma processes in semiconductor device manufacturing
Class 10 Plasma-2: Control of neutral particles Describes the motion of neutral particles in a plasma system
Class 11 Plasma-3: Control of charged particles Understand the relationship between the application of electric and magnetic fields and the motion of electrons and ions
Class 12 Plasma-4: Collision Understanding collision reactions such as ionization and excitation of atoms and molecules
Class 13 Plasma-5: Sheath and ion energy control Understanding ion acceleration and its control mechanism for a substrate placed in a plasma
Class 14 Plasma-6: Plasma systems Understand the mechanism of plasma reaction control mechanism
Class 15 Plasma-7: Process control Understand the current status and examples of plasma technology used in advanced device manufacturing


To distribute the hand-outs during class (also uploaded to OCW-i)

Reference books, course materials, etc.

・D.B. Bwillians: “Transmission Electron Microscopy: A Textbook for Materials Science”, Plenum Press (2009)
・S. Tomiya: “Chap. 7”Structural Defects in GaN-based Materials and their relation to GaN-based Laser diodes” in O. Ueda and S. J. Pearton (ed.) “Materials and Reliability Handbook for Semiconductor Optical and Electron Devices” Springer (2014)
・ Michael K. Miller :” Atom Probe Tomography: Analysis at the Atomic Level “, Springer (2000)
・Michael A. Lieberman, “Principles of Plasma Discharges and Materials Processing”, Wiley-Interscience (1994).

Assessment criteria and methods

To submit the report after the lectures instead not to conduct the examination.

Related courses

  • EEE.C341 Integrated Circuit Technology Integrated Circuit Technology
  • EEE.P451 Plasma Engineering
  • EEE.D391 Semiconductor Fabrication Process
  • EEE.D411 Semiconductor Physics
  • EEE.D401 Fundamentals of Electronic Materials
  • MAT.M402 Characterization of Nanomaterials b
  • EEE.D431 Fundamentals of Light and Matter I

Prerequisites (i.e., required knowledge, skills, courses, etc.)

No specific requirements

Contact information (e-mail and phone)    Notice : Please replace from "[at]" to "@"(half-width character).

Hitoshi Wakabayashi (wakabayashi.h.ab[at]m.titech.ac.jp),  
Shigetaka Tomiya (tomiya.s.aa [at]m.titech.ac.jp),
Tetsuya Tatsumi (tatsumi.t.ac [at]m.titech.ac.jp)


This class is held as part of a joint research course by “DE” of Sony Corporation. We are looking forward to actively attending those who have basic queries on material analysis technology and plasma processing, as well as those who are interested in research and development at companies, and those who are willing to obtain information that will be helpful for future careers.  “DE (Distinguished Engineers)" is a title given to technology professionals, with only 40 people appointed throughout all Sony group companies.

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