2019 Advanced Energy Electronics Devices

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Academic unit or major
Graduate major in Electrical and Electronic Engineering
Instructor(s)
Hisamoto Digh 
Course component(s)
Lecture
Day/Period(Room No.)
Intensive ()  
Group
-
Course number
EEE.D582
Credits
1
Academic year
2019
Offered quarter
3Q
Syllabus updated
2019/4/5
Lecture notes updated
-
Language used
English
Access Index

Course description and aims

"This course focuses on the MOS devices which currently play a key role in the energy-electronics fields covering wide operating voltages ranges (0.1~10000V). Physics of the device reliability issues will be a topic of this lecture because the issues have been paving the way to evolve MOS device structures, we will carefully study the basis of device reliability physics to innovate novel device structures.
Advanced energy electronics devices are important to solve the today’s social problems, i.e., global warming, resource and energy problem, health care, and so on. This class provides the basics of physics and device characteristics of advanced energy electronics devices, and issues for their applications. Students will have the chance to tackle exercises by applying knowledge acquired through this course, and to think of the new energy electronics devices.

"

Student learning outcomes

"By the end of this course, students will be able to:
1) Express the physics of advanced energy electronics devices
2) Explain the issues and key technologies for the applications
3) Express the physical principles and operational characteristics of MOS devices"

Keywords

MOSFET, device reliability, low-power MOS device, power MOS device, widegap semiconductor device,

Competencies that will be developed

Intercultural skills Communication skills Specialist skills Critical thinking skills Practical and/or problem-solving skills
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Class flow

At the former part of each lecture, the concepts of the topics are reviewed. At the latter part of each lecture, students tackle to exercise practical problems related to what is taught on that day to solve. Before coming to class, students should read the course schedule and check what topics will be covered.

Course schedule/Required learning

  Course schedule Required learning
Class 1 Introduction to MOSFET devices and fabrication process (Review) Understand MOSFETdevice physics and fabrication process
Class 2 Fundamentals and reliability issues of MOSFETs Understand MOSFET's reliability issues
Class 3 Challenge to MOSFET's reliability issues Understand evolution of MOSFETs for reliability issues
Class 4 Challenge to ultra-low supply voltages Understand the issues of MOS-type ultra-low supply voltage devices
Class 5 Foundmentals of Si Power MOS devices Understand fundamentals and issues of Si power MOS devices
Class 6 Foundmentals and Issues of Widegap semiconductor Power MOS devices Understand fundamentals and issues of SiC power MOS devices
Class 7 Challenge to Ultra-high supply voltages Understand ultra-high voltage devices
Class 8 Summary and assessment of student's level of understanding on what has been taught in the class. Review the course contents. Use the exercise problems to better understand the topics covered, and evaluate one’s own understanding.

Textbook(s)

"Simon M. Sze: ""Semiconductor Devices: Physics and Technology"" Wiley, 2001.
B. Jayant Baliga: “Fundamentals of Power Semiconductor Devices”, Springer-Verlag. 2008."

Reference books, course materials, etc.

Y. Taur and T. H. Ning: “Fundamentals of Modern VLSI Devices”, Cambridge, 1998.

Assessment criteria and methods

Students will be assessed on their understanding of energy electronics devices through the exercise problems during each class.

Related courses

  • EEE.F452 : Fundamentals of Electron Devices
  • MAT.M313 : Introduction to solid materials
  • PHY.C450 : Quantum Theory of Electrons in Solids

Prerequisites (i.e., required knowledge, skills, courses, etc.)

No prerequisites are necessary, but enrollment in the related courses is desirable.

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