2019 Advanced Power Semiconductor Devices

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Academic unit or major
Graduate major in Electrical and Electronic Engineering
Instructor(s)
Terashima Tomohide  Oi Takeshi  Gourab Majumdar 
Course component(s)
Lecture
Day/Period(Room No.)
Tue7-8(S223)  Wed1-2(S223)  
Group
-
Course number
EEE.D481
Credits
2
Academic year
2019
Offered quarter
2Q
Syllabus updated
2019/4/5
Lecture notes updated
-
Language used
Japanese
Access Index

Course description and aims

From the trend of energy conversion to electric power and demands of the energy saving, the expectation to high efficiency electricity conversion technology continues increasing. We introduce history, basic theory, current status, and problems focusing on power devices which play the key role in this electronic power conversion technology. Though power devices treat from several tenths of volts to several thousands of volts for each application, basic technology and operation are comparatively common. We aim to explain this common technology for understanding the detailed and latest power conversion technologies.

Student learning outcomes

1. Grasping basic information to use power devices.
2. Understanding the principle of the power device key operation.
3. Knowing a portion of the development activity in the industry.

Keywords

PiN diode, IGBT, Power MOSFET, Destruction phenomena, Safe Operating Area, SiC and GaN devices

Competencies that will be developed

Intercultural skills Communication skills Specialist skills Critical thinking skills Practical and/or problem-solving skills
- -

Class flow

Topics will be explained by using handouts, documents, and figures distributed at each class.

Course schedule/Required learning

  Course schedule Required learning
Class 1 Introduction of the power device --
Class 2 Basic information of the semiconductor --
Class 3 Functions and technologies common to power devices: ON-OFF operation, Gate drive, etc. --
Class 4 Basic operation of power diodes‐Ⅰ: PiN-Diode, Si/SiC-SBD --
Class 5 Trade-offs and AC characteristics of power diodes –Ⅱ:PiN-Diode, Si/SiC-SBD --
Class 6 Summary for power diodes: Comparing with WBG devices. --
Class 7 Basic operation of power MOSFET/IGBT: Si/SiC-MOSFET, Si-IGBT. --
Class 8 Trade-offs and AC characteristics of power MOSFET/IGBT: Si/SiC-MOSFET, Si-IGBT. --
Class 9 Operation of other devices: Thyristor, Bipolar Transistor. --
Class 10 Latest topics of power devices: SiC/GaN devices, cosmic-ray induced failure. --
Class 11 Latest topics of power conversion circuit technology: Rail Traction、EV/HEV --
Class 12 Latest topics of power conversion circuit technology: Wind Turbine、Photovoltaic --
Class 13 Inevitability and development of module structure: IPM, DIPIPM, etc. --
Class 14 Latest topics of packaging technology for power devices: dielectric isolation, heat spreading, noise suppression, etc. --
Class 15 Latest trend and future prospects of power devices --

Textbook(s)

Textbook will not be used, but the required documents will be distributed.

Reference books, course materials, etc.

Gourab Majumdar, Ikunori Takata, "Power Devices for Efficient Energy Conversion," ISBN 9789814774185, Pan Stanford Publishing, 2018
I. Takada,“Basis of power devices Part-I,-II,-III”
H, Ohashi, M. Kuzuhara, “Power Device”,Maruzen

Assessment criteria and methods

Grading evaluation will be made from the midterm and final reports. The midterm report is to evaluate the fundamental understanding of power devices. The final report is to confirm the overall understanding of operating principles and industrial applications of power devices presented through this course. Moreover, the process of the derivation will be evaluated as well as the correctness of the answer.

Related courses

  • EEE.P311 : Power Electronics
  • EEE.D211 : Semiconductor Physics

Prerequisites (i.e., required knowledge, skills, courses, etc.)

None in particular.

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