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School of Engineering
- Undergraduate major in Mechanical Engineering
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- Common courses
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- 工学院，物質理工学院，環境・社会理工学院共通科目
- Liberal arts and basic science courses
- First-Year Courses
- School of Science
- School of Engineering
- School of Materials and Chemical Technology
- School of Computing
- School of Life Science and Technology
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School of Environment and Society
- Department of Architecture and Building Engineering
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- Department of Social and Human Sciences
- Department of Innovation Science
- Graduate major in Technology and Innovation Management
- Common courses
- Liberal arts and basic science courses
- Academic unit or major
- Graduate major in Electrical and Electronic Engineering
- Instructor(s)
- Hisamoto Digh
- Class Format
- Lecture
- Media-enhanced courses
- Day/Period(Room No.)
- Intensive ()
- Group
- -
- Course number
- EEE.D582
- Credits
- 1
- Academic year
- 2018
- Offered quarter
- 3Q
- Syllabus updated
- 2018/4/5
- Lecture notes updated
- -
- Language used
- English
- Access Index
-
Course description and aims
"This course focuses on the MOS devices which currently play a key role in the energy-electronics fields covering wide operating voltages ranges (0.1~10000V). Physics of the device reliability issues will be a topic of this lecture because the issues have been paving the way to evolve MOS device structures, we will carefully study the basis of device reliability physics to innovate novel device structures.
Advanced energy electronics devices are important to solve the today’s social problems, i.e., global warming, resource and energy problem, health care, and so on. This class provides the basics of physics and device characteristics of advanced energy electronics devices, and issues for their applications. Students will have the chance to tackle exercises by applying knowledge acquired through this course, and to think of the new energy electronics devices.
"
Student learning outcomes
"By the end of this course, students will be able to:
1) Express the physics of advanced energy electronics devices
2) Explain the issues and key technologies for the applications
3) Express the physical principles and operational characteristics of MOS devices"
Keywords
MOSFET, device reliability, low-power MOS device, power MOS device, widegap semiconductor device,
Competencies that will be developed
| ✔ Specialist skills | ✔ Intercultural skills | ✔ Communication skills | Critical thinking skills | ✔ Practical and/or problem-solving skills |
Class flow
At the former part of each lecture, the concepts of the topics are reviewed. At the latter part of each lecture, students tackle to exercise practical problems related to what is taught on that day to solve. Before coming to class, students should read the course schedule and check what topics will be covered.
Course schedule/Required learning
| Course schedule | Required learning | |
|---|---|---|
| Class 1 | Introduction to MOSFET devices and fabrication process (Review) | Understand MOSFETdevice physics and fabrication process |
| Class 2 | Fundamentals and reliability issues of MOSFETs | Understand MOSFET's reliability issues |
| Class 3 | Challenge to MOSFET's reliability issues | Understand evolution of MOSFETs for reliability issues |
| Class 4 | Challenge to ultra-low supply voltages | Understand the issues of MOS-type ultra-low supply voltage devices |
| Class 5 | Foundmentals of Si Power MOS devices | Understand fundamentals and issues of Si power MOS devices |
| Class 6 | Foundmentals and Issues of Widegap semiconductor Power MOS devices | Understand fundamentals and issues of SiC power MOS devices |
| Class 7 | Challenge to Ultra-high supply voltages | Understand ultra-high voltage devices |
| Class 8 | Summary and assessment of student's level of understanding on what has been taught in the class. | Review the course contents. Use the exercise problems to better understand the topics covered, and evaluate one’s own understanding. |
Textbook(s)
"Simon M. Sze: ""Semiconductor Devices: Physics and Technology"" Wiley, 2001.
B. Jayant Baliga: “Fundamentals of Power Semiconductor Devices”, Springer-Verlag. 2008."
Reference books, course materials, etc.
Y. Taur and T. H. Ning: “Fundamentals of Modern VLSI Devices”, Cambridge, 1998.
Assessment criteria and methods
Students will be assessed on their understanding of energy electronics devices through the exercise problems during each class.
Related courses
- EEE.F452 ： Fundamentals of Electron Devices
- MAT.M313 ： Introduction to solid materials
- PHY.C450 ： Quantum Theory of Electrons in Solids
Prerequisites (i.e., required knowledge, skills, courses, etc.)
No prerequisites are necessary, but enrollment in the related courses is desirable.
