The lecture focuses on understanding the operation of scaled MOS devices based on scaling law and addressing the issues in recent 10-nm-class devices. Listeners will then understand the effectiveness of 3D or high mobility channel devices for high performance with low power consumption applications. Novel devices driven by different operation principle will be reviewed. The lecture will also include memory and image devices.
The performance of VLSI circuits has been improved by downsizing the MOS devices and continuous efforts and technology have been implemented to overcome the scaling limit. The lecture firstly delivers the scaling law of the MOS devices, and introduces the advantages and drawbacks of 3D structures and new channel materials. In addition, novel devices driven by new operating principle will be introduced and the issues will be addressed. Finally, memory and image devices will be discussed. Based upon expected marginal performance of scaled devices, we will discuss the candidate devices for next generation technology
MOS devices, Scaling law, Low power consumption devices
|✔ Specialist skills||Intercultural skills||Communication skills||Critical thinking skills||Practical and/or problem-solving skills|
Lectures will be held based on slides with hand-outs, and each time a report will be posed.
|Course schedule||Required learning|
|Class 1||MOS devices and its scaling law||Able to understand the device downsizing and its scaling law|
|Class 2||Issues in scaled MOS devices||Able to understand the short channel effect and DIBL in MOS devices|
|Class 3||Scaled MOS devices: 3D||Able to understand device progress from SOI to 3D structures including FinFET and nanowire FET|
|Class 4||Scaled MOS devices: high mobility channel||Able to understand III-V device performance and its interface state issue|
|Class 5||MOS devices with new operating principal||Able to understand device operation principle based on tunnel effect or negative capacitance|
|Class 6||Memory devices: SRAM, DRAM||Able to understand volatile memory including SRAM and DRAM|
|Class 7||Memory devices: flash, ReRAM||Able to understand nonvolatile memory including flash and resistive RAM|
|Class 8||CMOS image devices||Able to understand basics of CCD and CMOS imagers|
Y. Taur, T. H. Ning, "Fundamentals of Modern VLSI Devices", Cambridge University Press, ISBN 978-0-521-83294-6
Hand out will be delivered.
Scores based on submitted reports.
Listeners should understand the basic operation of MOS devices beforehand.