This course covers an outline of the history, the theory, current problems of power devices. The power device, which treats high withstand voltage and a destruction limit of several hundreds V ~ several thousands V, works by the mechanism that is unexpectedly simpler than memory and a CPU. We introduce a basic, simple way of thinking necessary for the understanding. In this lecture, We would show the discovery of the problem in the power device development, an example of the solution.
1. Grasping basic information to use power devices.
2. Understanding the principle of the power device key operation.
3. Knowing a portion of the development activity in the industry.
pin diode, IGBT, destruction phenomena and their limit (Safe Operating Area), SiC and GaN devices.
|Intercultural skills||Communication skills||Specialist skills||Critical thinking skills||Practical and/or problem-solving skills|
Topics will be explained in addition to the contents of the textbook.
Handouts, documents, and figures will be distributed at each class.
|Course schedule||Required learning|
|Class 1||Introduction of the power device (from a characteristic, a history -mercury rectifier to IGBT -)||--|
|Class 2||Basic information of the semiconductor What are the core of the power device?||--|
|Class 3||Functions and technologies common to the power device, technical -I (off/on, current control)||--|
|Class 4||Functions and technologies common to the power device, technical -II (Safe Operating Area, package)||--|
|Class 5||Structure and operation of power device -I (on-operation of diode and thyristor)||--|
|Class 6||Structure and operation of power device -II (on/off operation of GTO and MOSFET)||--|
|Class 7||Structure and operation of power device -IIIa (basic operation of Bipolar Transistor)||--|
|Class 8||Structure and operation of power device -IIIb (destruction phenomena of Bipolar Transistor)||--|
|Class 9||Structure and operation of power device -IV (breakdown phenomena of diode)||--|
|Class 10||Structure and operation of power device -V (on/off operation of IGBT)||--|
|Class 11||Problem peculiar to power device (cosmic-ray induced failure)||--|
|Class 12||Ultimate operation of power devices (destruction of IGBT, high and low temperature operation, withstand voltage, on/off speed)||--|
|Class 13||Reliability and Problems of power device (new material devices …)||--|
|Class 14||Inevitability and development of the module structure (by Dr. G. Majumdar)||--|
|Class 15||The latest trend and the future prospects of power device (by Dr. G. Majumdar)||--|
I. Takada，“Basis of power devices Part-I (the second edition)” in Japanese available at Tokyo Tech Oookayam coop.
I. Takada, “Basis of power devices Part-II, III”
The other related documents will be distributed in the class.
Grading evaluation will be made from the midterm and final reports considering the question contents in lectures.
The midterm report is to evaluate the understanding of the documents distributed at the beginning of this course. the final report is to confirm the understanding of power devices.
None in particular.