▶Japanese
Post to SNS
- Home
- > School of Engineering
- > Undergraduate major in Electrical and Electronic Engineering
- > Memory Devices
- School of Science
-
School of Engineering
- Undergraduate major in Mechanical Engineering
- Undergraduate major in Systems and Control Engineering
- Undergraduate major in Electrical and Electronic Engineering
- Undergraduate major in Information and Communications Engineering
- Undergraduate major in Industrial Engineering and Economics
- Common courses
- School of Materials and Chemical Technology
- School of Computing
- School of Life Science and Technology
- School of Environment and Society
- 工学院，物質理工学院，環境・社会理工学院共通科目
- Liberal arts and basic science courses
- First-Year Courses
- School of Science
- School of Engineering
- School of Materials and Chemical Technology
- School of Computing
- School of Life Science and Technology
-
School of Environment and Society
- Department of Architecture and Building Engineering
- Department of Civil and Environmental Engineering
- Department of Transdisciplinary Science and Engineering
- Department of Social and Human Sciences
- Department of Innovation Science
- Graduate major in Technology and Innovation Management
- Common courses
- Liberal arts and basic science courses
- Academic unit or major
- Undergraduate major in Electrical and Electronic Engineering
- Instructor(s)
- Sugahara Satoshi
- Class Format
- Lecture (Face-to-face)
- Media-enhanced courses
- Day/Period(Room No.)
- Tue5-6(W331)
- Group
- -
- Course number
- EEE.D371
- Credits
- 1
- Academic year
- 2022
- Offered quarter
- 3Q
- Syllabus updated
- 2022/9/7
- Lecture notes updated
- -
- Language used
- Japanese
- Access Index
-
Course description and aims
This course covers device and circuit technologies for memory systems that play an essential role in logic systems such as microprocessors, system-on-chip (SOC) devices, field-programmed gate array (FPGA) devices, and microcontrollers. First, the instructor lectures on the organization of hierarchical memory systems, circuit technologies of memory subsystems using various memories. Second, fundamentals of CMOS circuits are briefly reviewed, and then students learn the operating principles of bistable circuits as a basis for CMOS-based memories. Third, students will gain an understanding of the details of various flip-flop and SRAM circuits, along with their applications for registers, register files, and caches. Fourth, the instructor will cover device and circuit technologies of large capacity memory DRAM. Finally, practically used nonvolatile memories, i.e., Flash and FeRAM, and emerging nonvolatile memories such as MRAM, ReRAM, and PRAM are discussed. The present status and future prospects of these memory devices and circuits are also discussed.
Student learning outcomes
Through the course, the students will be able to
1) understand the concept and organization of memory hierarchy for logic systems.
2) comprehend the operating principles, microarchitectures, performance, and applications of CMOS-based bistable memories (latch, flip-flop, and SRAM).
3) comprehend the operating principles, microarchitectures, performance, and applications of nonvolatile memories (Flash, FeRAM, MRAM, ReRAM, and PRAM).
Keywords
memory hierarchy, resister, resister file, cache, bistable circut, latch, flip-flop, SRAM, DRAM, EPRAM, EEPROM, Flash, FeRAM, MRAM, ReRAM, PRAM
Competencies that will be developed
| Specialist skills | Intercultural skills | Communication skills | ✔ Critical thinking skills | Practical and/or problem-solving skills |
| ✔ ・Fundamental specialist skills on EEE | ||||
Class flow
Exercises will be carried out during the class to help students understand lectures
Course schedule/Required learning
| Course schedule | Required learning | |
|---|---|---|
| Class 1 | memory systems and their organization | Memory hierarchy, organization of memory systems |
| Class 2 | fundamentals of CMOS devices and circuits | Modeling of CMOS devices, CMOS inverter, transfer gates, and advanced CMOS devices |
| Class 3 | CMOS bistable circuit | Circuit configuration and operating principle of CMOS bistable circuits and latche applicationss |
| Class 4 | Flip-flop | Circuit configuration, operating principle, performance, and applications of flip-flops |
| Class 5 | SRAM | Circuit configuration, operating principle, microarchitectures, performance, and applications of SRAM |
| Class 6 | DRAM | Device structure, circuit configuration Operating principle, architectures, and performance of DRAM |
| Class 7 | ROM, Flash, and emerging nonvolatile memories | Device structure, circuit configuration, Operating principle, architectures, performance, and applications of EPROM, EEPROM, Flash memry, and emerging nonvolatile memories |
Out-of-Class Study Time (Preparation and Review)
To enhance effective learning, students are encouraged to spend approximately 100 minutes preparing for class and another 100 minutes reviewing class content afterwards (including assignments) for each class.
They should do so by referring to textbooks and other course material.
Textbook(s)
None specified
Reference books, course materials, etc.
Course materials will be provided
Assessment criteria and methods
Evaluation will be based on the term-end examination.
Related courses
- EEE.C341 ： Integrated Circuit Technology Integrated Circuit Technology
- EEE.D352 ： Electron Devices II
- EEE.C321 ： Digital Electronic Circuits
Prerequisites (i.e., required knowledge, skills, courses, etc.)
None in particular
