2019 Electron Devices II

Font size  SML

Register update notification mail Add to favorite lecture list
Academic unit or major
Undergraduate major in Electrical and Electronic Engineering
Instructor(s)
Kakushima Kuniyuki 
Course component(s)
Lecture
Day/Period(Room No.)
Fri5-6(S223)  
Group
-
Course number
EEE.D352
Credits
1
Academic year
2019
Offered quarter
2Q
Syllabus updated
2019/5/12
Lecture notes updated
-
Language used
Japanese
Access Index

Course description and aims

Performance of VLSI has been improved by scaling in MOS devices and continuous technology processes have been implemented to overcome the scaling limit. The lecture will overview new structures and materials for performance enhancement based on scaling law, and further discuss future MOS devices with novel principle. In addition, memory as well as image sensors technologies will be discussed.

Student learning outcomes

Understanding of the scaling law for advanced MOS devices with new structures and new materials.

Corresponding educational goals are:
(1) Specialist skills Fundamental specialist skills
(4) Applied skills (inquisitive thinking and/or problem-finding skills) Organization and analysis
(7) Skills acquiring a wide range of expertise, and expanding it into more advanced and other specialized areas

Keywords

MOSFET, 3D channel, high mobility channel, memory, image sensors

Competencies that will be developed

Intercultural skills Communication skills Specialist skills Critical thinking skills Practical and/or problem-solving skills
- - -

Class flow

Overview of advanced MOS devices using handouts. A short exam will be conducted at the end of the class. (except for the 1st class)

Course schedule/Required learning

  Course schedule Required learning
Class 1 Advanced MOS devices and scaling law Scaling law
Class 2 Issues in advanced MOS devices Short channel effect, ballistic transport
Class 3 Advanced MOS devices: 3D channel FinFET, Si nanowire FET
Class 4 Advanced MOS devices: high mobility channel high mobility channel
Class 5 MOS devices based on novel operating principals Tunnel FET, negative capacitances
Class 6 Memory devices: SRAM and DRAM SRAM, DRAM
Class 7 Memory devices: Flash and other memories Flash and other memories
Class 8 CMOS image sensors CMOS image sensor

Textbook(s)

Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press, 2nd Ed. 2009

Reference books, course materials, etc.

Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press, 2nd Ed. 2009

Assessment criteria and methods

Evaluation based on short exams on electrostatics, materials and so on.
No final exam. Short exams will be conducted from 2nd to 8th class and the total will be the score.

Related courses

  • ZIB.C403 : Electronic Properties of Semiconductors

Prerequisites (i.e., required knowledge, skills, courses, etc.)

Electromagnetism

Page Top