This course focuses on the device characteristics of electron devices (semiconductor devices) used in integrated circuits such as pn diodes, MOS diodes, bipolar transistors, and MOS transistors. The device structures and basic characteristics are explained for two-terminal devices such as pn diodes and MOS diodes, and three-terminal devices such as bipolar transistors and MOS transistors. The importance of 3-terminal devices in integrated circuits is discussed, which enables students to learn how the devices are applied in integrated circuits. Furthermore, the instructor explains the basic characteristics of the complementary MOS transistors (CMOS) used as a basic gate in the integrated circuits, and power devices used for power conversion devices. Through lectures and exercises, students deepen their understanding of the operating characteristics of electron devices.
The integrated circuits used in electronics for information and communication technology are created by integrating a huge amount of electron devices such as diodes and transistors. In order to achieve high performance of integrated circuits, it is necessary to improve the characteristics of electron devices with an understanding of the device physics. Through this course, students learn how precisely controlling the behavior of electrons and holes in a semiconductor allows for creating the operating characteristics of electron devices.
By the end of this course, students will be able to:
1) Explain the amplification of transistor.
2) Expand the band diagram of pn diode to explain the rectifying characteristic in current-voltage characteristic.
3) Explain the basic characteristics and design of high-speed bipolar transistor.
4) Expand the inversion characteristic of MOS diode to explain the basic characteristics and design of scaled MOS transistor.
5) Explain the structure and characteristics of CMOS consisting of p-channel MOS transistor and n-channel MOS transistor.
6) Explain the structure and characteristics of power devices.
Corresponding educational goals are:
(1) Specialist skills Fundamental specialist skills
(4) Applied skills (inquisitive thinking and/or problem-finding skills) Organization and analysis
(7) Skills acquiring a wide range of expertise, and expanding it into more advanced and other specialized areas
semiconductor device, pn diode, bipolar transistor, MOS diode, MOS transistor, CMOS, power device
|Intercultural skills||Communication skills||Specialist skills||Critical thinking skills||Practical and/or problem-solving skills|
At the beginning of each class, solutions to exercise problems that were assigned during the previous class are reviewed. Towards the end of class, students are given exercise problems related to the lecture given that day to solve. To prepare for class, students should read the course schedule section and check what topics will be covered. Required learning should be completed outside of the classroom for preparation and review purposes.
|Course schedule||Required learning|
|Class 1||Amplification of transistor, and review of semiconductor physics||Understand the physics of amplification of transistor with review of semiconductor physics.|
|Class 2||pn diode||Explain the band diagram and rectifying characteristic of pn diode.|
|Class 3||Characteristics of bipolar transistor||Explain the device structure and current-voltage characteristic of bipolar transistor.|
|Class 4||Bipolar transistor - Design of collector region.||Explain various effects of bipolar transistor, and design of collector region.|
|Class 5||Bipolar transistor - Design of collector region.||Explain various effects of bipolar transistor, and design of collector region.|
|Class 6||Bipolar transistor - Estimation of velocity.||Explain the speed and high-frequency characteristic of bipolar transistor.|
|Class 7||Carrier recombination process in bipolar transistor||Explain the current-voltage characteristic considering the carrier recombination process in bipolar transistor .|
|Class 8||Test the level of understanding of exercise problems and summary of the first part of the course - Solve exercise problems covering the contents of classes 1–7.||Test the level of understanding and self-evaluate achievement for classes 1–7.|
|Class 9||Basics of MOS transistor and scaling||Explain the device structure and scaling of MOS transistor.|
|Class 10||MOS diode||Explain the band diagram and the capacitance-voltage characteristic of MOS diode.|
|Class 11||Characteristics of MOS transistor||Explain the device structure and the current-voltage characteristic of MOS transistor.|
|Class 12||Threshold voltage of MOS transistor||Analyze the threshold voltage of MOS transistor.|
|Class 13||High-speed characteristics of MOS transistor||Explain the equivalent circuit and high-frequency characteristic of MOS transistor.|
|Class 14||Basic characteristics of CMOS||Explain the basic structure and characteristics of CMOS.|
|Class 15||Power device||Explain the structures and characteristics of power devices.|
Miyamoto, Yasuyuki. Electron Device. Tokyo: Baifukan; ISBN978-4-563-06991-9. (Japanese)
Furukawa, Seijiro. Semiconductor Device. Tokyo: Corona; ISBN3355-030241-2353. (Japanese)
Students' knowledge of the characteristics of pn-diode, bipolar transistor, MOS diode, MOS transistor, CMOS and power devices will be assessed.
Midterm and final exams 80%, exercise problems and reports 20%.
Students must have successfully completed Physics of Semiconductor (EEE.D211).
Miyamoto: Contact by e-mail in advance to schedule an appointment.
Ohmi: Contact by e-mail in advance to schedule an appointment.