2018 | Semiconductor Fabrication Process

2018　Semiconductor Fabrication Process

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Academic unit or major: Undergraduate major in Electrical and Electronic Engineering

Instructor(s): Miyamoto Yasuyuki

Class Format: Lecture

Media-enhanced courses

Day/Period(Room No.): Wed1-2(S223)

Group: -

Course number: EEE.D391

Credits: 1

Academic year: 2018

Offered quarter: 4Q

Syllabus updated: 2018/4/6

Lecture notes updated: 2019/1/15

Language used: Japanese

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Course description and aims

Principles and limitations of micro-fabrication process in semiconductor devices for high-speed operation are described. After explanation of requirement of simultaneous miniaturization in vertical direction and lateral direction for high speed operations, latest technology with focus on lithography are explained. Then, formation of doped region, etching, oxidation, film formation, electrode and wiring are described.

Student learning outcomes

By the end of this course, students will be able to:
1) Explain outlines of semiconductor processes which fabricated integrated circuit for popularization of cheap and high-speed electric circuits.
2) Understand the guidelines for more integration and higher speed.
3) Understand the method for miniaturization based on the scaling from principle operation of MOSFETs.

Keywords

Lithography, formation of doped region, etching, oxidation, film formation, electrode, wiring

Competencies that will be developed

✔ Specialist skills

Intercultural skills

Communication skills

Critical thinking skills

✔ Practical and/or problem-solving skills

Class flow

Because treated amount of knowledge is huge, each lecture asks simple calculation as homework. Any textbook or notebook can be used as reference in test level of understanding.

Course schedule/Required learning

	Course schedule	Required learning
Class 1	Requirements of semiconductor fabrication process and basis of optical lithography	Relation between diffraction image and process factor k1
Class 2	Present status of optical lithography (with resist)	Calculation of images by alternative phase shift method
Class 3	Present status of electron beam lithography (with resist)	Calculation of proximity correction
Class 4	NGL and formation of doped region	Calculation of Stopping and Range of Ions in Matter.
Class 5	Etching and oxidation process	Calculation of SiO2 oxide thickness by some conditions
Class 6	Film formation	Change of deposition rate by change of stagnant layer thickness in CVD
Class 7	Electrode and wiring	Evaluation of contact by transfer line method
Class 8	Test level of understanding with exercise problems and summary of the course - Solve exercise problems　-	Test level of understanding and self-evaluate achievement for classes 1–7.

Textbook(s)

N/A

Reference books, course materials, etc.

Distributed by OCW-i

Assessment criteria and methods

Evaluate based on the students' knowledge of semiconductor processes.
42 %: Sum of homework, 58%:Test level of understanding

Related courses

EEE.D351 ： Electron Devices I
EEE.D352 ： Electron Devices II

TOKYO INSTITUTE OF TECHNOLOGY