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School of Engineering
- Undergraduate major in Mechanical Engineering
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- 工学院，物質理工学院，環境・社会理工学院共通科目
- Liberal arts and basic science courses
- First-Year Courses
- School of Science
- School of Engineering
- School of Materials and Chemical Technology
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- School of Life Science and Technology
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School of Environment and Society
- Department of Architecture and Building Engineering
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- Graduate major in Technology and Innovation Management
- Common courses
- Liberal arts and basic science courses
- Academic unit or major
- Undergraduate major in Electrical and Electronic Engineering
- Instructor(s)
- Kakushima Kuniyuki
- Class Format
- Lecture
- Media-enhanced courses
- Day/Period(Room No.)
- Fri5-6(S223)
- Group
- -
- Course number
- EEE.D352
- Credits
- 1
- Academic year
- 2018
- Offered quarter
- 2Q
- Syllabus updated
- 2018/3/20
- Lecture notes updated
- -
- Language used
- Japanese
- Access Index
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Course description and aims
Performance of VLSI has been improved by scaling in MOS devices and continuous technology processes have been implemented to overcome the scaling limit. The lecture will overview new structures and materials for performance enhancement based on scaling law, and further discuss future MOS devices with novel principle. In addition, memory as well as image sensors technologies will be discussed.
Student learning outcomes
Understanding of the scaling law for advanced MOS devices with new structures and new materials.
Keywords
MOSFET, 3D channel, high mobility channel, memory, image sensors
Competencies that will be developed
| ✔ Specialist skills | Intercultural skills | Communication skills | Critical thinking skills | Practical and/or problem-solving skills |
Class flow
Overview of advanced MOS devices using handouts. A short exam will be conducted at the end of the class. (except for the 1st class)
Course schedule/Required learning
| Course schedule | Required learning | |
|---|---|---|
| Class 1 | Advanced MOS devices and scaling law | Scaling law |
| Class 2 | Issues in advanced MOS devices | Short channel effect, ballistic transport |
| Class 3 | Advanced MOS devices: 3D channel | FinFET, Si nanowire FET |
| Class 4 | Advanced MOS devices: high mobility channel | high mobility channel |
| Class 5 | MOS devices based on novel operating principals | Tunnel FET, negative capacitances |
| Class 6 | Memory devices: SRAM and DRAM | SRAM, DRAM |
| Class 7 | Memory devices: Flash and ReRAM | Flash, ReRAM |
| Class 8 | CMOS image sensors | CMOS image sensor |
Textbook(s)
Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press, 2nd Ed. 2009
Reference books, course materials, etc.
Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press, 2nd Ed. 2009
Assessment criteria and methods
Evaluation based on short exams on electrostatics, materials and so on.
Short exams will be conducted from 2nd to 8th class.
Related courses
- ZIB.C403 ： Electronic Properties of Semiconductors
Prerequisites (i.e., required knowledge, skills, courses, etc.)
Electromagnetism
