Performance of VLSI has been improved by scaling in MOS devices and continuous technology processes have been implemented to overcome the scaling limit. The lecture will overview new structures and materials for performance enhancement based on scaling law, and further discuss future MOS devices with novel principle. In addition, memory as well as image sensors technologies will be discussed.
Understanding of the scaling law for advanced MOS devices with new structures and new materials.
MOSFET, 3D channel, high mobility channel, memory, image sensors
✔ Specialist skills | Intercultural skills | Communication skills | Critical thinking skills | Practical and/or problem-solving skills |
Overview of advanced MOS devices using handouts.
Course schedule | Required learning | |
---|---|---|
Class 1 | Advanced MOS devices and scaling law | Scaling law |
Class 2 | Issues in advanced MOS devices | Short channel effect, ballistic transport |
Class 3 | Advanced MOS devices: 3D channel | FinFET, Si nanowire FET |
Class 4 | Advanced MOS devices: high mobility channel | high mobility channel |
Class 5 | MOS devices based on novel operating principals | Tunnel FET, negative capacitances |
Class 6 | Memory devices: SRAM and DRAM | SRAM, DRAM |
Class 7 | Memory devices: Flash and ReRAM | Flash, ReRAM |
Class 8 | CMOS image sensors | CMOS image sensor |
Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press, 2nd Ed. 2009
Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press, 2nd Ed. 2009
Evaluation based on short practice (20%) and examination (80%)
Electromagnetism