2016 Electron Devices II

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Academic unit or major
Undergraduate major in Electrical and Electronic Engineering
Instructor(s)
Kakushima Kuniyuki 
Course component(s)
Lecture
Mode of instruction
 
Day/Period(Room No.)
Fri5-6(S011)  
Group
-
Course number
EEE.D352
Credits
1
Academic year
2016
Offered quarter
2Q
Syllabus updated
2016/4/27
Lecture notes updated
-
Language used
Japanese
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Course description and aims

Performance of VLSI has been improved by scaling in MOS devices and continuous technology processes have been implemented to overcome the scaling limit. The lecture will overview new structures and materials for performance enhancement based on scaling law, and further discuss future MOS devices with novel principle. In addition, memory as well as image sensors technologies will be discussed.

Student learning outcomes

Understanding of the scaling law for advanced MOS devices with new structures and new materials.

Keywords

MOSFET, 3D channel, high mobility channel, memory, image sensors

Competencies that will be developed

Specialist skills Intercultural skills Communication skills Critical thinking skills Practical and/or problem-solving skills

Class flow

Overview of advanced MOS devices using handouts.

Course schedule/Required learning

  Course schedule Required learning
Class 1 Advanced MOS devices and scaling law Scaling law
Class 2 Issues in advanced MOS devices Short channel effect, ballistic transport
Class 3 Advanced MOS devices: 3D channel FinFET, Si nanowire FET
Class 4 Advanced MOS devices: high mobility channel high mobility channel
Class 5 MOS devices based on novel operating principals Tunnel FET, negative capacitances
Class 6 Memory devices: SRAM and DRAM SRAM, DRAM
Class 7 Memory devices: Flash and ReRAM Flash, ReRAM
Class 8 CMOS image sensors CMOS image sensor

Textbook(s)

Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press, 2nd Ed. 2009

Reference books, course materials, etc.

Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press, 2nd Ed. 2009

Assessment criteria and methods

Evaluation based on short practice (20%) and examination (80%)

Related courses

  • ZIB.C403 : Electronic Properties of Semiconductors

Prerequisites (i.e., required knowledge, skills, courses, etc.)

Electromagnetism

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