薄膜デバイスと大面積エレクトロニクス、パワーエレクトロニクスへの応用   Thin Film Devices and Their Applications

文字サイズ 

担当教員
波多野 睦子 
使用教室
火5-6(S323)  
単位数
講義:2  演習:0  実験:0
講義コード
55018
シラバス更新日
2013年4月7日
講義資料更新日
2013年4月8日
アクセス指標
学期
前期

講義概要

FETs based on thin film technologies have been contributed to the back-plain of the displays for the information society, and also applied to the power devices for low-carbon societies.
This class provides the basics of physics and device characteristics of FETs, and issues for their applications. After studying the field-effect transistor MOS FETs, Thin film transistors (semiconductor materials: Si, metal oxides, carbon-based, organic) will be explained. Then, advanced power FETs using new materials(SiC, GaN, Diamond) will be discussed. Students are requested for the preparation of reading references for discussion.

講義の目的

The objectives of this class are to understand;
(1) The physical principles and operational characteristics of FETs:
MOSFET, TFTs(Thin Film Transistors), advanced power FETs,
(2) Issues and key technologies for the applications: LSIs,information displays,power-control.

By taking this class, students are expected to get familiar with technologies of modern devices and physics based on thin film technologies, and to know the importance of their applications.

講義計画

01. Semiconductor Physics (Review)
02. MOS FETs and related devices
03. Applications: LSIs
04. Beyond CMOS
05. Thin film transistors (Si)
06. Thin film transistors (Metal-oxide)
07. Thin film transistors (Carbon)
08. Thin film transistors (Organic)
09. Applications for large area electronics: displays & sensors
10. Seminor
11. Power electronicsa and power devices
12. Power devices (SiC)
13. Power devices (GaN, GaO)
14. Power devices (Diamond)
15. Presentation and Discussion

教科書・参考書等

Simon M. Sze: "Semiconductor Devices: Physics and Technology", Wiley, 2001.
Y. Taur and T.H. Ning: "Fundamentals of Modern VLSI Devices", Cambridge, 1998.
B. Jayant Baliga: "Fundamentals of Power Semiconductor Devices", Springer-Verlag, 2008.

Others may be specified as the need arises

関連科目・履修の条件等

Knowledge fundamentals on electron devices,solid-state physicsKnowledge, and quantum is required.

成績評価

Exercises during the class (20%)
Presentation and discussion of the references (30%)
Term-end Exam. (50%)

担当教員の一言

Exercises are carried out during the classes to help understanding.

オフィスアワー

Anytime, with permission by e-mail at
[hatano.m.ab (at) m.titech.ac.jp] for Prof. Mutsuko Hatano

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