- Lecturer
- Hatano Mutsuko
- Place
- Tue5-6(S323)
- Credits
- Lecture2 Exercise0 Experiment0
- Code
- 55018
- Syllabus updated
- 2013/4/7
- Lecture notes updated
- 2013/4/8
- Access Index
-
- Semester
- Spring Semester
Outline of lecture
FETs based on thin film technologies have been contributed to the back-plain of the displays for the information society, and also applied to the power devices for low-carbon societies.
This class provides the basics of physics and device characteristics of FETs, and issues for their applications. After studying the field-effect transistor MOS FETs, Thin film transistors (semiconductor materials: Si, metal oxides, carbon-based, organic) will be explained. Then, advanced power FETs using new materials(SiC, GaN, Diamond) will be discussed. Students are requested for the preparation of reading references for discussion.
Purpose of lecture
The objectives of this class are to understand;
(1) The physical principles and operational characteristics of FETs:
MOSFET, TFTs(Thin Film Transistors), advanced power FETs,
(2) Issues and key technologies for the applications: LSIs,information displays,power-control.
By taking this class, students are expected to get familiar with technologies of modern devices and physics based on thin film technologies, and to know the importance of their applications.
Plan of lecture
01. Semiconductor Physics (Review)
02. MOS FETs and related devices
03. Applications: LSIs
04. Beyond CMOS
05. Thin film transistors (Si)
06. Thin film transistors (Metal-oxide)
07. Thin film transistors (Carbon)
08. Thin film transistors (Organic)
09. Applications for large area electronics: displays & sensors
10. Seminor
11. Power electronicsa and power devices
12. Power devices (SiC)
13. Power devices (GaN, GaO)
14. Power devices (Diamond)
15. Presentation and Discussion
Textbook and reference
Simon M. Sze: "Semiconductor Devices: Physics and Technology", Wiley, 2001.
Y. Taur and T.H. Ning: "Fundamentals of Modern VLSI Devices", Cambridge, 1998.
B. Jayant Baliga: "Fundamentals of Power Semiconductor Devices", Springer-Verlag, 2008.
Others may be specified as the need arises
Related and/or prerequisite courses
Knowledge fundamentals on electron devices,solid-state physicsKnowledge, and quantum is required.
Evaluation
Exercises during the class (20%)
Presentation and discussion of the references (30%)
Term-end Exam. (50%)
Comments from lecturer
Exercises are carried out during the classes to help understanding.
Office Hours
Anytime, with permission by e-mail at
[hatano.m.ab (at) m.titech.ac.jp] for Prof. Mutsuko Hatano
