Field effect transistors based on thin film technologies have been contributed to the back-plain of the displays for the information society, and also applied to the power devices for low-carbon societies.
This class provides the basics of physics and device characteristics of FETs, and issues for their applications. After studying the field-effect transistor MOS FETs, Thin film transistors (semiconductor materials: Si, metal oxides, carbon-based) will be explained.
Then, the power FETs using new materials(SiC, GaN, Diamond) will be introduced.
The objectives of this class are to understand;
(1) The physical principles and operational characteristics of FETs:
MOSFET, TFTs(Thin Film Transistors), advanced power FETs,
(2) Issues and key technologies for the applications: LSIs,information displays,power-control.
By taking this class, students are expected to get familiar with technologies of modern devices and physics based on thin film technologies, and to know the importance of their applications.
01. Semiconductor Physics (Review)
02. MOS FETs and related devices
03. Applications: LSIs
04. Beyond CMOS
05. Thin film transistors (Si, Metal-oxide, Carbon)
06. Applications for large area electronics: displays & sensors
07. Power FETs (SiC, GaN, Diamond)
Simon M. Sze: "Semiconductor Devices: Physics and Technology", Wiley, 2001.
Y. Taur and T.H. Ning: "Fundamentals of Modern VLSI Devices", Cambridge, 1998.
B. Jayant Baliga: "Fundamentals of Power Semiconductor Devices", Springer-Verlag, 2008.
Others may be specified as the need arises
Knowledge of fundamentals on quantum mechanics and solid-state physics
Exercises during the class (30%)
Term-end Exam. (70%)
Exercises are carried out during the classes to help understanding.
Anytime, with permission by e-mail at
[hatano.m.ab (at) m.titech.ac.jp] for Prof. Mutsuko Hatano