- 担当教員
- 小田 俊理
- 使用教室
- 水3-4(S322)
- 単位数
- 講義：2 演習：0 実験：0
- 講義コード
- 50120
- シラバス更新日
- 2008年10月3日
- 講義資料更新日
- 2008年10月3日
- 学期
- 後期
講義概要
1.固体電子デバイス・材料に関する最近の話題について講述する。
2.半導体デバイスの微細化・集積化，高速化の限界。量子効果デバイス。超伝導デバイス。
Limitation of silicon microdevices and alternative technology: Quantum nano-devices, will be
discussed.
Major topics include; Approaches for high-speed devices, Parameters which
講義の目的
On the basis of Electron Devices and Quantum Theory of undergraduate course, this course provides general consideration on integrated electron devices leading to advanced discussion on limitation of silicon microdevices and possibilities of alternative technology.
講義計画
01.Approaches for high-speed devices
02.Parameters which determine the speed of ICs
03.Heterojunction devices
04.Scaling limit of MOSFETs
05.Interconnections
06.Physics of quantum effects in nanoscale devices
07.Criteria for quantum effects
08.Fabrication technology of quantum nano-structures
09.Single electron transistors
10.Josephson junction and vortex devices
11.Superconducting digital devices
12.Quantum computing and architectures
教科書・参考書等
Technical Digests of IEDM, Extended Abstracts of SSDM
関連科目・履修の条件等
Knowledge of fundamentals on electron devices and quantum theory of undergraduate level is required.
成績評価
Evaluation will be based on the presentation and discussion in the classroom.
担当教員の一言
Microelectronics technology is changing rapidly. Present status and future prospects of electron devices are discussed. Students are requested for the preparation of reading references for discussion.
