- Lecturer
- Oda Shunri
- Place
- Wed3-4(S322)
- Credits
- Lecture2 Exercise0 Experiment0
- Code
- 50120
- Syllabus updated
- 2008/10/3
- Lecture notes updated
- 2008/10/3
- Semester
- Fall Semester
Outline of lecture
1.蝗ｺ菴馴崕蟄舌ョ繝舌う繧ｹ繝ｻ譚先侭縺ｫ髢｢縺吶ｋ譛霑代ｮ隧ｱ鬘後↓縺､縺縺ｦ隰幄ｿｰ縺吶ｋ縲
2.蜊雁ｰ惹ｽ薙ョ繝舌う繧ｹ縺ｮ蠕ｮ邏ｰ蛹悶ｻ髮遨榊喧ｼ碁ｫ倬溷喧縺ｮ髯千阜縲る丞ｭ仙柑譫懊ョ繝舌う繧ｹ縲りｶ莨晏ｰ弱ョ繝舌う繧ｹ縲
Limitation of silicon microdevices and alternative technology: Quantum nano-devices, will be
discussed.
Major topics include; Approaches for high-speed devices, Parameters which
Purpose of lecture
On the basis of Electron Devices and Quantum Theory of undergraduate course, this course provides general consideration on integrated electron devices leading to advanced discussion on limitation of silicon microdevices and possibilities of alternative technology.
Plan of lecture
01.Approaches for high-speed devices
02.Parameters which determine the speed of ICs
03.Heterojunction devices
04.Scaling limit of MOSFETs
05.Interconnections
06.Physics of quantum effects in nanoscale devices
07.Criteria for quantum effects
08.Fabrication technology of quantum nano-structures
09.Single electron transistors
10.Josephson junction and vortex devices
11.Superconducting digital devices
12.Quantum computing and architectures
Textbook and reference
Technical Digests of IEDM, Extended Abstracts of SSDM
Related and/or prerequisite courses
Knowledge of fundamentals on electron devices and quantum theory of undergraduate level is required.
Evaluation
Evaluation will be based on the presentation and discussion in the classroom.
Comments from lecturer
Microelectronics technology is changing rapidly. Present status and future prospects of electron devices are discussed. Students are requested for the preparation of reading references for discussion.
